RF power transistor having improved stability and gain

Details RF power transistor having improved stability and gain RF power transistor having improved stability and gain

1997-09-29

1999-02-09

Bowers, Charles

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

438330, 438309, 438324, 438329, 438338, 438342, H01L 21328

Patent

active

058693815

ABSTRACT:
Increased gain and improved stability are realized in using resistive emitter ballasting by including integrated capacitive elements in parallel with the resistive elements in the emitter circuit. A feature of the invention is an integrated capacitor structure having a small surface area to minimize parasitic capacitance, whereby resistor and capacitor surface areas of 100 square micrometers or less are obtained. Another feature of the invention is the use of a high dielectric material in realizing a resistor-capacitor impedance zero at a frequency much lower than the operating frequency of the transistor. For an operating frequency of 2 GHz and resistor values of 50-250 ohms, capacitance required is 3 pF or greater. Another feature of the invention is a method of fabricating the integrated resistive-capacitive element in either a low temperature process or a high temperature process which minimizes capacitor leakage when using a thin high dielectric insulative material between capacitor plates.

REFERENCES:
patent: 5374844 (1994-12-01), Moyer
patent: 5455449 (1995-10-01), Inn
patent: 5488252 (1996-01-01), Johansson et al.
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5629648 (1997-05-01), Pratt
patent: 5716506 (1998-02-01), Maclay et al.
Wolf Stanley, Silicon Processing for the VLSI Era, vol. 1, p. 520, 1990.

Affiliated with

Also associated with

Rating

RF power transistor having improved stability and gain does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF power transistor having improved stability and gain, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power transistor having improved stability and gain will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1948160