RF power transistor having an encapsulated chip package

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S670000, C257S676000, C257SE23043

Reexamination Certificate

active

07605451

ABSTRACT:
In various embodiments, semiconductor components and methods to manufacture semiconductor components are disclosed. In one embodiment, a method to manufacture semiconductor components includes attaching multiple heat spreaders to a semiconductor wafer. Other embodiments are described and claimed.

REFERENCES:
patent: 5008736 (1991-04-01), Davies et al.
patent: 6307755 (2001-10-01), Williams et al.
patent: 6455925 (2002-09-01), Laureanti
patent: 6566749 (2003-05-01), Joshi et al.
patent: 6586833 (2003-07-01), Baliga
patent: 6617686 (2003-09-01), Davies
patent: 6649975 (2003-11-01), Baliga
patent: 6653691 (2003-11-01), Baliga
patent: 6674157 (2004-01-01), Lang
patent: 6727117 (2004-04-01), McCoy
patent: 6759746 (2004-07-01), Davies
patent: 6777786 (2004-08-01), Estacio
patent: 6784366 (2004-08-01), Boucher et al.
patent: 7093358 (2006-08-01), Akram et al.
patent: 7335534 (2008-02-01), Pavio
patent: 2003/0062601 (2003-04-01), Harnden et al.
patent: 2003/0218237 (2003-11-01), Hall et al.
patent: 2004/0043539 (2004-03-01), Lee et al.
patent: 2004/0238934 (2004-12-01), Warner et al.
patent: 2005/0017339 (2005-01-01), Yoshiba et al.
patent: 2005/0121701 (2005-06-01), Hirano et al.
patent: 2006/0189038 (2006-08-01), Pavio
patent: 2006/0263944 (2006-11-01), Lange
patent: 2007/0090434 (2007-04-01), Davies et al.
patent: 2007/0132091 (2007-06-01), Wu et al.
patent: 2008/0017998 (2008-01-01), Pavio
patent: 2008/0093718 (2008-04-01), Pavio
patent: 2005/069378 (2005-07-01), None
“Packaging of Metal Post Interconnected Parallel Plate Structure (MPIPPS) Modules”, 21 pages.
Adamson, Philip , “Lead-free Packaging for Discrete Power Semiconductors”, International IOR Rectifier- as presented at the 2002 JEDEC Conference, (Apr./May 2002), 5 pages.
Bussarakons, Tiva, “New Materials and Technologies Solve Hermetic SMD Integration”, International IOR Rectifier- as appeared in PCIM Power Electronic Systems Magazine, (Dec. 1999),5 pages.
Davies, Robert B., “Power Semiconductor Device and Method Therefor”, US Patent Application filed Mar. 23, 2006, U.S. Appl. No. 11/387,617, 176 pgs.
Juhel, S. , “PowerSO-10RF: The First True RF Power SMD Package”, AN1294 Application Note, (Feb. 2001),12 pages.
Mahalingam, Mali, “Low Rth Device Packaging for High Power RF LDMOS Transistors for Cellular and 3G Base Station Use”, Freescale Semiconductor, Inc., Motorola Inc. 2003, 4 pages.
Pavio, Jeanne S., “Semiconductor Component and Method of Manufacture”, U.S. Appl. No. 11/458,566, filed Jul. 19, 2006; Confirmation #: 8992 Art Unit #: 3729 (copy not enclosed/attached).
Prophet, Graham, “Power FETs find their place”, EDN, (Apr. 17, 2003), 6 pages.
Radivojevic, Z. , “Novel Material for Improved Quality of RF-PA in Base-Station Applications”, Presented at 10th International Workshop on Thermal Investigations of ICs and Systems, Co-Authored by Nokia Research Center and Freescale Semiconductor,(Sep./Oct. 2004),7 pages.
Sawle, Andrew, “DirectEFT—A Proprietary New Source Mounted Power Package for Board Mounted Power”, http://www.irf.com/technical-info/whitepaper/directfet.pdf, (Unknown), 5 pages.
Xu, Jane “GaN HEMTs based Flip-chip Integrated Broadband Power Amplifier”, ONR M U R I Center Impact, Innovative Microwave Power Amplifier Consortium Center; University of California at Santa Barbara, 72 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

RF power transistor having an encapsulated chip package does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF power transistor having an encapsulated chip package, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power transistor having an encapsulated chip package will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4073382

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.