RF power supply with integrated matching network

Details RF power supply with integrated matching network RF power supply with integrated matching network

2005-05-03

2005-05-03

Hassanzadeh, Parviz (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With measuring, sensing, detection or process control means

C156S345480, C156S345470, C156S345410, C118S7230ER, C118S7230IR, C118S7230MW

Reexamination Certificate

active

06887339

ABSTRACT:
The invention features an RF plasma generator. The RF plasma generator includes a variable frequency RF generator, comprising an H-bridge and an RF output. The RF generator generates electromagnetic radiation having a power. The RF plasma generator further includes a matching network that includes at least one variable impedance component. The matching network also includes a first port that is electromagnetically coupled to the output of the RF generator and a second port. The RF plasma generator also includes a load that is electromagnetically coupled to the second port of the matching network, and a plasma chamber for containing a plasma having a power. The plasma chamber is electromagnetically coupled to the load and receives electromagnetic radiation having a power from the load. Adjusting at least one of the frequency of the RF generator and the variable impedance component in the matching network changes the power in the plasma.

REFERENCES:
patent: 2981902 (1961-04-01), Familier
patent: 3509500 (1970-04-01), McNair et al.
patent: 3794941 (1974-02-01), Templin
patent: 3906405 (1975-09-01), Kommrusch
patent: 4095198 (1978-06-01), Kirby
patent: 4201960 (1980-05-01), Skutta et al.
patent: 4486722 (1984-12-01), Landt
patent: 4486723 (1984-12-01), Lysobey
patent: 5474648 (1995-12-01), Patrick et al.
patent: 5556549 (1996-09-01), Patrick et al.
patent: 5565737 (1996-10-01), Keane
patent: 5573595 (1996-11-01), Dible
patent: 5643364 (1997-07-01), Zhao et al.
patent: 5654679 (1997-08-01), Mavretic et al.
patent: 5670881 (1997-09-01), Arakawa et al.
patent: 5688357 (1997-11-01), Hanawa
patent: 5815047 (1998-09-01), Sorensen et al.
patent: 6020795 (2000-02-01), Kim
patent: 6027601 (2000-02-01), Hanawa
patent: 6211745 (2001-04-01), Mucke et al.
patent: 6222321 (2001-04-01), Scholl et al.
patent: 6229392 (2001-05-01), Porter et al.
patent: 6311638 (2001-11-01), Ishii et al.
Fujita et al., “A 2-MHz 6-kVA Voltage-Source Inverter Using Low-Profile MOSFET Modules for Low-Temperature Plasma Generators,”IEEE Transactions on Power Electronics, vol. 14, No. 6, Nov. 1999.
Raab, “Class-E HF Power Amplifier With Electronic Tuning and Modulation,”Int. Microwave Symp. Digest, vol. 3, pp. 1513-1566, Phoenix AZ May 20-25, 2001.
El-Hamamsy, “Design of High-Efficiency RF Class-D Power Amplifier,”IEEE Transactions on Power Elecetronics, vol. 9, No. 3, May 1994.
Koizumi et al., “Class DE High-Efficiency Tuned Power Amplifier,”IEEE Transactions on Circuits and Systems-I: Fundamental Theory and Applications, vol. 43, No. 1, Jan. 1996.
Casey et al., “A High-Frequency, Low volume, Point-of-Load Power Supply for Distributed Power Systems,”IEEE Transactions on Power Electronics, vol. 3, No. 1, Jan. 1988, pp. 72-82.
“An Intelligent Solution to RF Load-Power Variability,”vol. 2, No. 3, 3rdQuarter (1995) pp. 1-8.

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