Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1989-12-12
1991-05-21
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330 55, 330295, H03F 326, H03F 368
Patent
active
050178865
ABSTRACT:
An RF power combiner combines the power of several microwave high power FET amplifiers. A plurality of baluns which convert a balanced transmission line to an unbalanced transmission line and have outputs which are 180.degree. out of phase from each other may be connected at the inputs and the outputs of the FETs. This connection allows for very high output power while matching impedances of the input and the output of the power combiner. Additionally, loss in the output circuit can be minimized by connecting equi-phase outputs of the FETs in a parallel/push-pull manner.
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patent: 4647868 (1987-03-01), Mueller
Ikeda, "Development of a Solid State Radio Transmitter with MOS/FET", IEEE Transactions on Broadcasting, vol. BC-26, No. 4, Dec. 1980, pp. 99-112.
Comsat
Mullins James B.
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