RF power amplifier integrated circuit and unit cell

Details RF power amplifier integrated circuit and unit cell RF power amplifier integrated circuit and unit cell

2011-06-14

2011-06-14

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Integrated circuits

C330S311000

Reexamination Certificate

active

07961052

ABSTRACT:
A novel RF power amplifier integrated circuit (PA IC), unit cell, and method for amplifying RF signals are disclosed. One embodiment of a PA IC includes at least two linear arrays comprising transistor device units, and at least one linear array comprising capacitors. The transistor device units include source nodes that are jointly coupled to a source bus, and selected gate nodes that are jointly coupled to a gate bus. First electrodes of the capacitors are also jointly coupled to the source bus, and second electrodes of the capacitors are jointly coupled to the gate bus. Each linear array comprising capacitors is disposed between at least two linear arrays comprising transistor device units. In one embodiment, the PA IC includes unit cells. In some embodiments, each unit cell comprises two transistor device units and one or more capacitors. The capacitors are disposed between the transistor device units. The unit cells are disposed in linear arrays so that the transistor device units are disposed in linear arrays and the capacitors are disposed in linear arrays.

REFERENCES:
patent: 4016643 (1977-04-01), Pucel et al.
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6190957 (2001-02-01), Mochizuki et al.
patent: 7573768 (2009-08-01), Kang et al.
patent: WO2004/086606 (2004-10-01), None
patent: WO2004/095688 (2004-11-01), None
Tong, Ah Fatt, et al., “RFCMOS Unit Width Optimization Technique”, IEEE Transactions on Microwave Theory and Techniques, vol. 55, No. 9, Sep. 2007, pp. 1844-1853.
Schultz, John J., “The Dual-Gate MOSFET”, CQ Magazine, Dec. 1968, pp. 30-32.

Affiliated with

Also associated with

Rating

RF power amplifier integrated circuit and unit cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF power amplifier integrated circuit and unit cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power amplifier integrated circuit and unit cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2652776