Amplifiers – With semiconductor amplifying device – Including protection means
Reexamination Certificate
2008-10-15
2010-11-23
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including protection means
C330S297000
Reexamination Certificate
active
07839218
ABSTRACT:
The RF power amplifier apparatus has an RF power amplifier and a power-supply circuit. The power-supply circuit controls the level of a source voltage supplied to the RF power amplifier in response to the level of a power-control signal. A sensing resistance produces a sense signal Vsen corresponding to a source current with respect to a source voltage. The current-control unit controls the source current ILDOin response to the sense signal Vsen. When Vsen coincides with an allowable sense signal level Vsh corresponding to a source current allowable level ILDO(Max), the current-control unit controls the source current ILDOto a limit current smaller than the allowable level ILDO(Max). Preferably, the limit current is a shutdown current when a shutdown switch is in an OFF state. Thus, the draining of the battery of a mobile-phone terminal can be reduced even when an impedance mismatch condition lasts for a long time.
REFERENCES:
patent: 7173491 (2007-02-01), Bocock et al.
patent: 7193474 (2007-03-01), Phillips et al.
“High-Efficiency, Multi-Mode, Multi-Band Terminal Power Amplifiers” Earl McCune, IEEE Mar. 2005.
“A High Current Low Dropout Regulator With Dual Output Stage and Dual Control Loop” by Oscar Moreira-Tamayo, 2005 IEEE.
“High Performance Open-Loop AM Modulator Designed for Power Control of E-GPRS Polar Modulated Power Amplifier” by David R. Pehlke, et al.IEEE 2004.
Namie Hisanori
Shimamoto Kenichi
Mattingly & Malur, P.C.
Nguyen Khiem D
Pascal Robert
Renesas Electronics Corporation
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