RF power amplifier

Details RF power amplifier RF power amplifier

2007-12-25

2007-12-25

Mottola, Steven J. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

Reexamination Certificate

active

11204051

ABSTRACT:
A bias current to be supplied to an amplification circuit60is drawn out of a collector of a transistor Q11of a bias circuit10. The drawn-out bias current is input to a base of a transistor Q13via an attenuation filter F2and is output from an emitter of the transistor Q13in the state where the voltage thereof is reduced by a level corresponding to Vbe. The attenuation filter F2is conducted in a DC manner, and attenuates a component of a frequency fH(=2ft−fr) defined by a transmission frequency ft and a receiving frequency fr of a radio frequency signal. The bias current output from the emitter of the transistor Q13is supplied to the amplification circuit60via an attenuation filter F1. The attenuation filter F1is conducted in a DC manner, and attenuates a component of a frequency fL(=|fr−ft|).

REFERENCES:
patent: 5321279 (1994-06-01), Khatibzadeh et al.
patent: 6476668 (2002-11-01), Gharpurey et al.
patent: 6686801 (2004-02-01), Cho et al.
patent: 6778018 (2004-08-01), Joly et al.
patent: 6828861 (2004-12-01), Cho et al.
patent: 2002-009558 (2002-01-01), None
patent: 2003-324325 (2003-11-01), None
patent: 2004-080763 (2004-03-01), None

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