RF power amplifier

Details RF power amplifier RF power amplifier

1989-05-19

1990-05-08

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

H03F 130

Patent

active

049241940

ABSTRACT:
An improved RF power amplifier is disclosed whereby a PIN-type diode is utilized to provide temperature tracking for the bias supply. The PIN diode provides proper temperature tracking with the bias supply while exhibiting reduced sensitivity to self-rectification. As a result, the power amplifier's bias supply is more stable and less susceptible to inaccuracies, distortion, and oscillation that may be caused by self-rectification in the presence of high RF fields, especially at UHF and 800 MHz.

REFERENCES:
patent: 4677392 (1987-06-01), Yang
D. A. Kleinman, "The Forward Characteristic of the PIN Diode", The Bell System Technical Journal, May 1956, pp. 685-706.

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