RF metrology characterization for field installation and...

Data processing: measuring – calibrating – or testing – Calibration or correction system – Signal frequency or phase correction

Reexamination Certificate

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C702S057000, C702S060000, C702S064000, C702S065000

Reexamination Certificate

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06983215

ABSTRACT:
A system for field substitution of components of a RF metrology system. The system includes a sensor/cable combination and an analysis unit. Parameters of the RF metrology system are determined prior to placing the RF metrology system in the field. From these parameters, either component, the cable/sensor combination or the analysis module, may be substituted in the field by recalibrating the system for the substituted unit. Such recalibration is carried out utilizing the parameters determined prior to placing the RF metrology system in the field.

REFERENCES:
patent: 4679007 (1987-07-01), Reese et al.
patent: 4861148 (1989-08-01), Santo et al.
patent: 5285236 (1994-02-01), Jain
patent: 5402224 (1995-03-01), Hirukawa et al.
patent: 5438413 (1995-08-01), Mazor et al.
patent: 5472561 (1995-12-01), Williams et al.
patent: 5615006 (1997-03-01), Hirukawa et al.
patent: 5737496 (1998-04-01), Frye et al.
patent: 5757507 (1998-05-01), Ausschnitt et al.
patent: 5834931 (1998-11-01), Moore et al.
patent: 5867020 (1999-02-01), Moore et al.
patent: 5877861 (1999-03-01), Ausschnitt et al.
patent: 5894350 (1999-04-01), Hsieh et al.
patent: 6079256 (2000-06-01), Bareket
patent: 6143621 (2000-11-01), Tzeng et al.
patent: 6239587 (2001-05-01), Buck
patent: 6259525 (2001-07-01), David
patent: 6326584 (2001-12-01), Jewett et al.
patent: 6449568 (2002-09-01), Gerrish
patent: 6708123 (2004-03-01), Gerrish
patent: 6781317 (2004-08-01), Goodman
patent: 2003/0052085 (2003-03-01), Parsons
patent: 2004/0021454 (2004-02-01), Jevtic et al.
patent: 2004/0150389 (2004-08-01), Anderson et al.
patent: 2004/0210407 (2004-10-01), Quon et al.
patent: 2004/0253921 (2004-12-01), Turner
patent: 1 339 086 (2003-08-01), None
Armitage Jr., J.D. and Kirk, J.P., “Analysis of overlay distortion patterns”,SPIE, 921:207-222, (1988).
Bjorkholm et al., “Reduction imaging at 14 nm using multilayer-coated optics: printing of features smaller than 0.1 μm”,J. Vac. Sci. Technol.B., 8(6):1509-1543, (1990).
Brunner, T.A., “Impact Of Lens Aberrations On Optical Lithography”,IBM Journal of Research and Development: Optical Lithography 41(1-2):57-67, (1997)(http://www.research.ibm.com/journal/rd/411/brunner.html).
Bruning et al., “Optical Lithography—Thirty years and three orders of magnitude”,SPIE, 3051:14-27, (1997).
Cote et al., “Micrascan™ III-performance of a third generation, catadioptric step and scan lithographic tool”,SPIE, 3051:806-816, (1997).
DeJule, R., “Mix-and Match: A Necessary Choice”,Semiconductor International, 23(2): 66-76, (Feb., 2000).
Dooly, T. and Yang, Y., “Stepper matching for optimum line performance”,SPIE, 3051:426-432, (1997).
Goodwin, F. and Pellegrini, J.C., “Characterizing Overlay Registration of Concentric 5X and 1X Stepper Exposure Fields using Interfield Data”,SPIE, 3050:407-417, (1997).
Handbook of Microlithography, Micromachining, and Microfabrication, Book: vol. 1, “Microlithography”, Rai-Choudhury, P. (Ed.), SPIE Optical Engineering Press, SPIE, Bellingham, Washington, pp. 417-418, (1997).
Hasan et al., “Automated Electrical measurements of Registration Errors in Step-and-Repeat optical Lithography Systems”,IEEE Transactions on Electron Devices, ED27(12):2304-2312, (1980).
Kemp et al., “A “golden standard” wafer design for optical stepper characterization”,SPIE, 1464:260-266, (1991).
KLA 5105, “Linewidth and Misregistration System”, KLA 5105 Product Specifications,KLA Instruments Corporation, 2 pages, (1995).
KLA 5200, “Value-added Overlay Metrology for Advanced Lithography”, KLA 5200 Product Specifications,KLA Instruments Corporation, 2 pages, (1996).
Kodama, K. and Matsubara, E., “Measuring system XY-5i”,SPIE, 2439:144-155, (1995).
Leica LMS IPRO, “Fully automated mask and wafer metrology system”,Leica, pamphlet pp. 1-5.
Lin, B.J., “The Attenuated Phase-Shifting Mask”,Solid State Technology, Special Series/Advanced Lithography, 35(1):43-47, ( Jan., 1992).
MacMillen, D. and Ryden, W.D., “Analysis of image field placement deviations of a 5X microlithographic reduction lens”,SPIE, 334:78-89, (1982).
Martin et al., “Measuring Fab Overlay Programs”,SPIE, 3677:64-71(1999).
Mc Fadden, E.A. and Ausschnitt, C.P., “A Computer Aided Engineering Workstation For Registration Control”,SPIE, 1087:255-266, (1989).
Mulkens et al., “ArF Step And Scan Exposure System For 0.15 μm Technology Node?”,SPIE, 3679:506-521, (1999).
Newnam, B.E. and Viswanathan, V.K., “Development of XUV projection lithograph at 60-80 nm”,SPIE, 1671:419-436, (1992).
Numerical Recipes, “The Art of Scientific Computing”, Press et al. (Eds.), Cambridge University Press, New York, pp. 52-64 (1990).
Pellegrini, J.C., “Comparisons of Six Different Intrafield Control Paradigms in an Advanced Mix-and-Match Environment”,SPIE, 3050:398-406, (1997).
Pellegrini et al., “Super Sparse Overlay Sampling Plans: An Evaluation of Methods and Algorithms for Optimizing Overlay Quality Control and Metrology Tool Throughput”,SPIE, 3677:72-82, (1999).
Preil, M.E. and McCormack, J.F.M., “A New Approach to Correlating Overlay and Yield”,SPIE, 3677:208-216, (1999).
Quaestor Q7, “Fully Automated Optical Metrology System for Advanced IC Production”, Quaestor Q7 Product Specification,BIO -RAD, 2 pages.
Raugh, M.R., “Error estimation for lattice methods of stage self-calibration”,SPIE, 3050:614-625, (1997).
Sullivan, N.T., “Semiconductor Pattern Overlay”,SPIE Critical Reviews of Optical Science and Technology, CR52:160-188, (1994).
Takac et al., “Self-calibration in two-dimensions: the experiment”,SPIE, 2725:130-146, (1996).
van den Brink et al., “Direct-referencing automatic two-points reticle-to-wafer alignment using a projection column servo system”,SPIE, 633:60-71, (1986).
van den Brink et al., “Matching Management Of Multiple Wafer Steppers Using A Stable Standard And A Matching Simulator”,SPIE, 1087:218-232, (1989).
van den Brink et al., “Matching Of Multiple Wafer Steppers For 0.35 μm Lithography Using Advanced Optimization Schemes”,SPIE, 1926:188-207, (1993).
van den brink et al., “Matching Performance For Multiple Wafer Steppers Using An Advanced Metrology Procedure”,SPIE, 921:180-197, (1988).
van den Brink et al., “New 0.54 Aperture i-Line Wafer Stepper With Field By Field Leveling Combined With Global Alignment”,SPIE, 1463:709-724, (1991).
van Schoot et al., “0.7 NA DUV Step & Scan System For 150nm Imaging With Improved Overlay”,SPIE, 3679:448-463, (1999).
Yost, A. and Wu, W., “Lens matching and distortion testing in a multi-stepper, sub-micron environment”,SPIE, 1087:233-244, (1989).
Zavecz et al., “Life Beyond Mix-and-Match: Controlling Sub-0.18 μm Overlay Errors”,Semiconductor International, 23(8):205,206,208,210,212 and 214, (Jul., 2000).
Zavecz, T.E., “Machine Models and Registration”,SPIE Critical Reviews of Optical Science and Technology, CR52:134-159 (1994).
Advanced RF Metrology for Plasma Process Control, David Coumou, Oct. 2003.

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