RF MEMS switch and fabrication method thereof

Details RF MEMS switch and fabrication method thereof RF MEMS switch and fabrication method thereof

2006-12-28

2008-11-25

Takaoka, Dean O (Department: 2817)

Wave transmission lines and networks

Long line elements and components

Switch

C333S105000

Reexamination Certificate

active

07456713

ABSTRACT:
Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

REFERENCES:
patent: 6426687 (2002-07-01), Osborn
patent: 6621387 (2003-09-01), Hopcroft
patent: 6713695 (2004-03-01), Kawai et al.
patent: 6750742 (2004-06-01), Kang et al.
patent: 6909346 (2005-06-01), Kornrumpf
patent: 7098577 (2006-08-01), Mehta

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