RF driven gate bias

Details RF driven gate bias RF driven gate bias

1989-12-18

1992-02-11

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

330136, 330140, 455127, H03G 330

Patent

active

050878930

ABSTRACT:
A circuit for providing DC bias voltage to an RF power amplifier transistor where the DC bias voltage is derived from the RF input signal.

REFERENCES:
patent: 4465980 (1984-08-01), Huang et al.

Affiliated with

Also associated with

Rating

RF driven gate bias does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF driven gate bias, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF driven gate bias will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-784028