RF bias sputtering method for producing insulating films free of

Details RF bias sputtering method for producing insulating films free of RF bias sputtering method for producing insulating films free of

1976-06-01

1977-07-19

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

360113, C23C 1500

Patent

active

040367231

ABSTRACT:
An insulating film substantially free from surface irregularities is RF bias sputtered onto a smooth polycrystalline or micro-roughened surface. Controlled sputtering is performed first at a low reemission coefficient and then, after a substantially continuous layer of insulative amorphous film is deposited over the substrate, increasing the reemission coefficient to a second higher level. A low reemission coefficient is about 0.25 and a high coefficient is about 0.7.

REFERENCES:
patent: 3983022 (1976-09-01), Auyang

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