RF amplifying device

Details RF amplifying device RF amplifying device

2008-08-15

2010-11-02

Pascal, Robert (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

C330S192000, C330S295000, C330S126000

Reexamination Certificate

active

07825731

ABSTRACT:
An RF amplifying device includes a transmission line transformer coupled to an output electrode of a power transistor for generating transmission power to be fed to an antenna. The transmission power from the output electrode of the power transistor is fed to one end of a main line of the transmission line transformer, and one end of a secondary line of the transmission line transformer is coupled to an AC grounding node. The other end of the secondary line is coupled to the one end of the main line, thereby generating the transmission power. Coupling energy is transmitted from the secondary line to the main line. Coupling members electrically coupled to the output electrode of the power transistor are electrically coupled to a joint formed in either the main line, or the secondary line, at part of the energy coupling part.

REFERENCES:
patent: 3919656 (1975-11-01), Sokal et al.
patent: 6223022 (2001-04-01), Birth et al.
Inder Bahl, “Broadband and Compact Impedance Transformers for Microwave Circuits”, IEEE Microwave Magazine, Aug. 2006, pp. 56, 58-60, and 62.
J. Horn et al., “Integrated Transmission Line Transformer”, IEEE MTT-S Digest , 2004, pp. 201-204.
Bill Toole et al., “A Low Voltage, Low Power RF CMOS LNA for Bluetooth Applications Using Transmission Line Transformers”, Proceedings of the 27thEuropean Solid-State Circuits Conference, ESSCIRC, Sep. 2001, pp. 433-436.
Octavius Pitzalis et al., “Broadband 60-W HF Linear Amplifier”, IEE Journal of Solid-State Circuits, vol. SC-6, No. 3, Jun. 1971, pp. 93-103.
Brett Klehn et al., “An Exact Analysis of Class-E Power Amplifiers for RF Communications”, Proceedings of the 2004 International Symposium on Circuits and Systems, pp. 277-280.

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