RF amplifier with stacked transistors, transmitting device,...

Details RF amplifier with stacked transistors, transmitting device,... RF amplifier with stacked transistors, transmitting device,...

2007-08-20

2009-02-10

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural stages cascaded

C330S310000

Reexamination Certificate

active

07489202

ABSTRACT:
An RF transmitting device (10) includes an RF amplifier (22) formed having components formed on a common semiconductor substrate (14). RF amplifier (22) includes MOS transistors (42) and (44) and an RF choke (46) stacked between a ground node (32) and a Vddnode (36). Transistors (42) and (44) are directly connected together and are biased by a control terminal bias network (58) so that the voltages appearing across their conduction terminals are about equal. Control terminals (56) and (62) of transistors (42) and (44) are driven by in-phase versions of an RF input signal (20).

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patent: WO 03/079543 (2003-09-01), None

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