Telecommunications – Transmitter and receiver at same station – Radiotelephone equipment detail
Patent
1998-11-18
2000-09-19
Eisenzopf, Reinhard J.
Telecommunications
Transmitter and receiver at same station
Radiotelephone equipment detail
330296, H04B 138, H03F 304
Patent
active
061225320
ABSTRACT:
Accordingly, an RF amplifier with reduced power consumption is disclosed. In one embodiment, the RF amplifier includes first and second transistors for amplifying signals. The first transistor has a gate coupled to an input signal source. The second transistor has a gate coupled to the gate of the first transistor for signals in the operating frequency range of the amplifier. The second transistor also has a drain terminal coupled to the drain of the first transistor for signals in the operating frequency range. A first bias voltage generator circuit coupled to the gate of the first transistor provides a first bias voltage to the gate of the first transistor. Likewise, a second bias voltage generator circuit coupled to the gate of the second transistor provides a second bias voltage to the gate of the second transistor. An impedance connected between the source of the second transistor and the drain of the first transistor conducts a bias current. The first and second transistors each conduct a varying current in response to an input signal from the input signal source. In one embodiment, a load impedance coupled to the drain of the second transistor conducts a variable current generated by the first and second transistors and converts the variable current into an output voltage. The amplifier consumes only half the power of a single-transistor amplifier with the same effective device width and distortion level.
REFERENCES:
patent: 5392004 (1995-02-01), Masliah
patent: 5493255 (1996-02-01), Murtojarvi
patent: 5548248 (1996-08-01), Wang
patent: 5764107 (1998-06-01), Stone
patent: 5889433 (1999-03-01), Honma
patent: 5923215 (1999-07-01), Hans
patent: 5929710 (1999-07-01), Bien
AACD '98, Workshop on Advances In Analog Circuit Design, Hotel Richmond, Copenhagen, Denmark, "Design of Broadband Low-Noise Amplifiers in Deep-Submicron CMOS Technologies," Johan Janssens and Michiel Steyaert, Apr. 28-30, 1998.
Appiah Charles N.
Eisenzopf Reinhard J.
TriQuint Semiconductor Corporation
LandOfFree
RF amplifier with reduced power consumption does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with RF amplifier with reduced power consumption, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF amplifier with reduced power consumption will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1082592