Amplifiers – With semiconductor amplifying device – Including current mirror amplifier
Reexamination Certificate
2006-01-31
2006-01-31
Nguyen, Khanh V. (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including current mirror amplifier
C330S277000
Reexamination Certificate
active
06992530
ABSTRACT:
An amplifier having first and second enhancement-mode Field Effect Transistors (FETs) is disclosed. The input port receives an input signal that is to be amplified. The source of the first FET is connected to the input port such that the first FET provides an input impedance match for a signal source connected to the input port. The gate of the second FET is connected to the drain of the first FET such that the second FET amplifies the output signal from the drain of the first FET to provide an amplified input signal. The first and second FETs form a current mirror. An output circuit provides a predetermined output impedance at an output port for coupling the amplified input signal to a circuit that is external to the amplifier. In one embodiment of the invention, the output circuit includes a third FET connected as a source follower with the second FET.
REFERENCES:
patent: 5164681 (1992-11-01), Nishimura
patent: 6369658 (2002-04-01), Nilson
patent: 6617915 (2003-09-01), Rajan
patent: 405029845 (1993-02-01), None
Agilent Technologie,s Inc.
Nguyen Khanh V.
LandOfFree
RF amplifier with improved impedance matching does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with RF amplifier with improved impedance matching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF amplifier with improved impedance matching will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3550396