Telecommunications – Receiver or analog modulated signal frequency converter – Frequency modifying or conversion
Patent
1996-08-01
2000-02-15
Eisenzopf, Reinhard J.
Telecommunications
Receiver or analog modulated signal frequency converter
Frequency modifying or conversion
455333, 455319, 455341, H04B 116
Patent
active
060262869
ABSTRACT:
A low voltage silicon bipolar RF (radio frequency) receiver front end includes a low noise preamplifier and double-balanced mixer. The receiver incorporates monolithic microstrip transformers for significant improvements in performance compared with silicon broadband designs. Reactive feedback and coupling elements are used in place of resistors to lower the front end noise figure through the reduction of resistor thermal noise, and this also allows both circuits to operate at supply voltages below 2 volts. Circuits fabricated using 0.8 .mu.m Bipolar CMOS technology provide a peak npn transistor transit frequency f.sub.T of 11 GHz. At a supply voltage of 1.9 volts, the measured input third order intercept point is +2.3 dBm with a 10.9 dB single-sideband noise figure. Power dissipated is less than 5 mW. The low noise amplifier input intercept is -3 dBm with a 2.8 dB noise figure and 0.5 dB gain. Power dissipation of the preamplifier is less than 4 mW from a 1.9 V supply.
REFERENCES:
patent: 3727078 (1973-04-01), Wollesen
patent: 4637069 (1987-01-01), Charbonnier
patent: 4677692 (1987-06-01), Sakashita et al.
patent: 4774477 (1988-09-01), Rodes et al.
patent: 4853652 (1989-08-01), Collin
patent: 4975658 (1990-12-01), Takayama
patent: 5153466 (1992-10-01), Stein et al.
patent: 5166639 (1992-11-01), Green et al.
patent: 5379457 (1995-01-01), Nguyen
patent: 5386130 (1995-01-01), Gamand et al.
patent: 5410743 (1995-04-01), Seely et al.
patent: 5521545 (1996-05-01), Terry et al.
patent: 5528769 (1996-06-01), Berenz et al.
patent: 5539241 (1996-07-01), Abidi et al.
patent: 5548840 (1996-08-01), Heck
patent: 5559349 (1996-09-01), Cricchi et al.
patent: 5661647 (1997-08-01), Washburn et al.
"Monolithic Microstrip Component Modeling for Silicon RFIC's", J. Long, 1994 SSCTC Workshop, Toronto, Canada, Aug. 25, 1994.
"Microwave Mixers", S.A. Maas, Chapter 4, Norwood, Mass.: Artech House, 1993.
"Noise Figures of Radio Receivers", H.T. Friis, Proc. of I.R.E., vol. 32, No. 11, pp. 419-422, Jul.1944.
"A Sub-micron BiCMOS Technology for Telecommunications", R. Hadaway et al., Journal of Microelectronic Engineering, vol. 15, pp. 513-516, 1991.
"Microstrip Transmission on Semiconductor Dielectrics", T.M. Hyltin, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-13, No. 6, pp. 777-781, Nov. 1965.
"Si IC-compatible Inductors and LC Passive Filters", N.M. Nguyen and R.G. Meyer, IEEE Journal of Solid-State Circuits, vol. 27, No. 10, pp. 1028-1031, Aug. 1990.
"Highly Integrated Transmitter RFIC With Monolithic Narrowband Tuning for Digital Cellular Handsets", K. Negus et al., Proc. of Int.'l Solid-State Circuits Conference, pp. 38-39, San Francisco, 1994.
"A Low-voltage Silicon Bipolar RF Front-end for PCN Receiver Applications", J.R. Long et al., Proc. of Int.'l Solid-State Circuits Conference, pp. 140-141, San Francisco, 1995.
"Future Directions in Silicon ICs for RF Personal Communications", P.R. Gray and R.G. Meyer, Proc. of Custom Integrated Circuits Conference, pp. 83-89, Santa Clara, 1995.
"High Q Inductors for Wireless Applications in a Complementary Silicon Bipolar Process", K.B. Ashby et al., Proc. of Bipolar and BiCMOS Circuits and Technology Meeting, pp. 179-182, Minneapolis, 1994.
"Monolithic Microwave Transformers", G.G. Rabjohn, M.Eng. thesis, Carleton Univesity, Apr. 1991 (Table of Contents only).
"Inductance Calculations", F.W. Grover, Princeton, J.J.; Van Nostrand, 1946; reprinted by Dover Publications, New York, N.Y., 1954, Chapter 5, pp. 31-44.
"Design of Planar Rectangular Microelectronic Inductors", H.M. Greenhouse, IEEE Trans. on Parts, Hybrids and Packaging, vol. PHP-10, No. 2, pp. 101-109, Jun. 1974.
"A Closed-form Expression for Representing the Distributed Nature of the Spiral Inductor", D. Krafesik and D. Dawson, Proc. of IEEE-MTT Monolithic Circuits Symposium Digest, pp. 87-91, 1986.
"A Parallel-plate Waveguide Approach to Microminiaturized, Planar Transmission Lines for Integrated Circuits", H. Guckel et al., IEEE Trans. on Microwave Theory and Techniques, vol. MTT-15, No. 8, pp. 468-476, Aug. 1967.
"Calculation of Characteristic Admittances and Coupling Coefficients for Strip Transmission Lines", D. Kammler, IEEE Trans. on Microwave Theory and Techniques, vol. MTT-16, No. 11, pp. 925-937, Nov. 1968.
"Properties of Microstriplines on Si-SiO2 System", H. Hasegawa et al., IEEE Trans. on Microwave Theory and Techniques, vol. MTT-19, No. 2, pp. 869-881, Nov. 1971.
"CAD Models of Lumped Elements on GaAs Up to 18 GHz", E. Pettenpaul et al., IEEE Trans. on Microwave Theory and Techniques, vol. MTT-36, No. 2, pp. 294-304, Feb. 1988.
"Microwave Circuit Design Using Linear and Non-Linear Techniques", G.D. Vendelin et al., Chapter 4, pp. 238-251, New York, N.Y.: Wiley, 1990.
"The Effect of Feedback on Noise Figure", S. Iversen, Proc. of the IEEE, vol. 63, pp. 540-542, Mar. 1975.
"The Noise Performance of Microwave Transistors", H. Fukui, IEEE Trans. on Electron Devices, vol. ED-13, pp. 329-341, Mar. 1966.
"Minimizing Noise in Analog Bipolar Circuit Design", D.F. Bowers, Proc. of Bipolar and BiCMOS Circuits and Technology Meeting, pp. 107-111, Minneapolis, 1989.
Bipolar and MOS Analog Integrated Circuit Design, A. Grebene, Chapter 4, pp. 451-472, and Chapter 9, pp. 193-213, New York, N.Y.: Wiley, 1984.
"A 1-GHz BiCMOS RF Front-end IC", R.G. Meyer and W.D. Mack, IEEE Journal of Solid-State Circuits, Nol.29, No. 3, pp. 350-355, Mar. 1994.
"Ultra Low Power Low Noise Amplifiers for Wireless Communications", E. Heaney et al., Proc. of GaAs IC Symposium, pp. 49-51, San Jose, Calif., Oct. 1993.
"Conversion Loss and Noise of Microwave and Millimeter-wave Mixers: Part 1--Theory", D.N. Held and A.R. Kerr, IEEE Trans. on Microwave Theory and Technques, vol. MTT-26, pp. 49, Feb. 1978.
"GaAs Front-end MMICs for L-band Personal Communications", T. Ohgihara et al., IEEE 1993 Microwave and Millimeter-wave Monolithic Circuits Symposium Technical Digest, pp. 9-12, Atlanta, Georgia, Jun. 1993.
"An L-band Ultra Low Power Consumption Monolithic Low Noise Amplifier", M. Nakatsugawa et al., Proc. of the GaAs IC Symposium, pp. 45-48, San Jose, Calif., Oct. 1993.
"0.3 .mu.m Advanced Saint FET's Having Asymmetric N+-layers for Ultra High Frequency GaAs MMIC's", T. Enoki et al., IEEE Trans. on Electron Devices, vol. ED-35, pp. 18-24, Jan. 1988.
Carleton University
de Wilton Angela C.
Eisenzopf Reinhard J.
Kincaid Lester G.
Nortel Networks Corporation
LandOfFree
RF amplifier, RF mixer and RF receiver does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with RF amplifier, RF mixer and RF receiver, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF amplifier, RF mixer and RF receiver will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1913444