RF amplifier providing reduced drive response rise times and fal

Details RF amplifier providing reduced drive response rise times and fal RF amplifier providing reduced drive response rise times and fal

1992-11-17

1994-01-25

Pascal, Robert J.

Amplifiers

With semiconductor amplifying device

Including particular biasing arrangement

330281, 330141, 330136, 307268, 307263, H03F 304

Patent

active

052819256

ABSTRACT:
The normally slow rise time of a Class C bipolar transistor grounded base RF power amplifier is greatly enhanced by circuitry external to the amplifier transistor. Current is injected into the base of the transistor for the duration of the rise time, biasing it into Class A operation during this period. Then, after the base current injection, operation reverts to Class C to retain amplifier power efficiency. Finally, the normally slow fall time of the bipolar Class C RF power amplifier is greatly enhanced by reverse-biasing the base-to-emitter junction during the fall time. During this fall time the amplifier is forced into its cutoff region by the applied reverse bias, as stored charge is pulled out of the base-emitter region of the transistor. In this manner, the power efficiency advantage of Class C power amplifiers may be retained, while adding the benefits of sharper output rise and fall times that would not otherwise be achieved.

REFERENCES:
patent: 4087761 (1978-05-01), Fukumoto et al.
patent: 4379996 (1983-04-01), Weber
patent: 4460876 (1984-07-01), Najman
patent: 4644293 (1987-02-01), Kennett
patent: 4804931 (1989-02-01), Hulick
patent: 4924191 (1990-05-01), Erb et al.

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