RF Amplifier having automatic gate bias switching in response to

Details RF Amplifier having automatic gate bias switching in response to RF Amplifier having automatic gate bias switching in response to

1981-03-02

1983-04-05

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330278, 330296, 330305, 334 56, 3581911, 455188, H03F 3193, H03J 524, H04N 544

Patent

active

043792693

ABSTRACT:
Herein disclosed is an RF amplifier which is equipped with a high-frequency amplifying element such as a dual gate MOS FET having its first gate fed with a bias voltage and its second gate fed with an AGC voltage, in which a switching diode is fed with a switching voltage thereby to switch the bands, in which the voltage at a voltage dividing point where the switching voltage is divided is used as the bias voltage, and in which the voltage at the dividing point is so raised upon the reception of a high band as to make the effect of the AGC uniform upon the receptions of the low and high bands.

REFERENCES:
patent: 4048598 (1977-09-01), Knight

Affiliated with

Also associated with

Rating

RF Amplifier having automatic gate bias switching in response to does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF Amplifier having automatic gate bias switching in response to, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF Amplifier having automatic gate bias switching in response to will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-566429