Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1981-10-29
1983-12-27
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330307, 330310, H03F 304
Patent
active
044233884
ABSTRACT:
An RF amplifier including first and second FETs which are interconnected to function as a single transistor with improved gate. An input signal is applied across the gate and source of the first FET, and an output signal is obtained across the drain and source of the second transistor. RF coupling of the FETs is provided by first and second serially connected transmission lines connected between the drain of the first FET and the gate of the second FET. A third transmission line connects the common terminal of the first and second transmission line to circuit ground. In a preferred embodiment, the amplifier comprises a monolithic circuit formed in gallium arsenide with the transmission lines comprising microstrip.
REFERENCES:
patent: 4277764 (1981-07-01), Rosier et al.
Vauken et al. "High Voltage Operation of Power GaAs FET Amplifiers" Sep. 1980 pp. 621-624 Conference: Proceedings of the European Microwave Conference.
Crescenzi et al., "A Monolithic Device for High Gain Amplifiers" Microwaves Jul. 1981.
Crescenzi, Jr. Emil J.
Gold Richard B.
Oglesbee Richard W.
Wilser Walter T.
Mullins James B.
Wan Gene
Watkins-Johnson Company
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