RF amplifier

Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement

Reexamination Certificate

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Details

C330S311000

Reexamination Certificate

active

07728672

ABSTRACT:
Provided is a radio frequency (RF) amplifier. The RF amplifier includes an amplification circuit amplifying an RF signal, a bias voltage generation circuit supplying a bias voltage of the amplification circuit, and a first bias resistor connected between the amplification circuit ad the bias voltage generation circuit, and having a predetermined resistance allowing the bias voltage to be affected by the RF signal.

REFERENCES:
patent: 6414553 (2002-07-01), Luo
patent: 6893101 (2005-05-01), Marra et al.
patent: 7274258 (2007-09-01), Wang
patent: 7365604 (2008-04-01), Luo et al.
patent: 7397309 (2008-07-01), Tanoi
patent: 2007/0096823 (2007-05-01), Wang et al.
patent: 1020010079373 (2001-08-01), None
Cheng-Chi Yen et al., “A 0.25-μm 20-dBm 2.4-GHz CMOS Power Amplifier With an Integrated Diode Linearizer”, IEEE Microwave and Wireless Components Letters, vol. 13, No. 2, Feb. 2003, pp. 45-47.
Rimal Deep Singh et al., “A Linear Mode CMOS Power Amplifier with Self-Linearizing Bias”, ASSCC pp. 251-254, 2006 IEEE.

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