Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Reexamination Certificate
2008-05-09
2010-06-01
Nguyen, Khanh V (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
C330S311000
Reexamination Certificate
active
07728672
ABSTRACT:
Provided is a radio frequency (RF) amplifier. The RF amplifier includes an amplification circuit amplifying an RF signal, a bias voltage generation circuit supplying a bias voltage of the amplification circuit, and a first bias resistor connected between the amplification circuit ad the bias voltage generation circuit, and having a predetermined resistance allowing the bias voltage to be affected by the RF signal.
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Cheng-Chi Yen et al., “A 0.25-μm 20-dBm 2.4-GHz CMOS Power Amplifier With an Integrated Diode Linearizer”, IEEE Microwave and Wireless Components Letters, vol. 13, No. 2, Feb. 2003, pp. 45-47.
Rimal Deep Singh et al., “A Linear Mode CMOS Power Amplifier with Self-Linearizing Bias”, ASSCC pp. 251-254, 2006 IEEE.
Choi Yun-Ho
Hyun Seok-Bong
Kim Young-Ho
Electronics and Telecommunications Research Institute
Nguyen Khanh V
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