Rewritable single-bit-per-cell flash memory

Details Rewritable single-bit-per-cell flash memory Rewritable single-bit-per-cell flash memory

2011-07-12

2011-07-12

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185010

Reexamination Certificate

active

07978529

ABSTRACT:
Subject matter disclosed herein relates to multilevel flash memory, and more particularly to a method of changing a logic level of a single-bit-per-cell flash memory device multiple times before an erase operation.

REFERENCES:
patent: 7474577 (2009-01-01), Crippa et al.
patent: 7768828 (2010-08-01), Lee

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