Rework process of patterned photo-resist layer

Details Rework process of patterned photo-resist layer Rework process of patterned photo-resist layer

2006-10-24

2006-10-24

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S636000, C438S952000, C438S725000

Reexamination Certificate

active

07125741

ABSTRACT:
A rework process of patterned photo-resist layer is provided. First, a substrate is provided with a first DARC, a first primer and a first patterned photo-resist layer being sequentially formed thereon. Next, remove the first patterned photo-resist layer and the first primer from the first DARC. After that, form a second DARC on the first DARC; form a second primer on the second DARC. Last, form a second patterned photo-resist layer on the second primer.

REFERENCES:
patent: 5883006 (1999-03-01), Iba
patent: 6200907 (2001-03-01), Wang et al.
patent: 6251568 (2001-06-01), Hsia et al.
patent: 6300672 (2001-10-01), Lee
patent: 6737359 (2004-05-01), Yang et al.
patent: 6740392 (2004-05-01), Farrar
patent: 6861177 (2005-03-01), Pinarbasi et al.
patent: 6884734 (2005-04-01), Buehrer et al.
patent: 6903023 (2005-06-01), Wise et al.
patent: 2002/0058383 (2002-05-01), Mancini et al.
patent: 2003/0017688 (2003-01-01), Hsu et al.
patent: 2004/0102040 (2004-05-01), Adetutu et al.
patent: 526539 (2003-04-01), None

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