Reversibly programmable polycrystalline silicon memory element

Details Reversibly programmable polycrystalline silicon memory element Reversibly programmable polycrystalline silicon memory element

1981-02-09

1983-12-13

Larkins, William D.

357 1, 357 51, 357 57, H01L 4500

Patent

active

044207662

ABSTRACT:
A polycrystalline silicon memory element having an impurity concentration in the range of 10.sup.17 to 10.sup.20 atoms per cubic centimeter is reversibly switchable from a high to a low resistance state through a negative resistance region using a voltage above the threshold having a ramped trailing edge.

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patent: 3460007 (1969-08-01), Scott, Jr.
patent: 3504239 (1970-03-01), Johnson et al.
patent: 4110776 (1978-08-01), Rao et al.
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4199692 (1980-04-01), Neale
patent: 4210996 (1980-07-01), Amemiya et al.

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