Reversible oxidation protection of microcomponents

Details Reversible oxidation protection of microcomponents Reversible oxidation protection of microcomponents

2007-11-27

2007-11-27

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21267

Reexamination Certificate

active

11270294

ABSTRACT:
In a method for the reversible oxidation protection of microcomponents, a substrate is provided, a silicon nitride layer is provided on the substrate in order to protect it against oxidation, an insulation layer is applied to the silicon nitride layer, and a reoxidation process is carried out. In the reoxidation process are generated oxygen radicals which are passed through the insulation layer to the silicon nitride layer in order to convert silicon nitride of the nitride layer into silicon dioxide.

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