Reverse switching rectifier and method for making same

Details Reverse switching rectifier and method for making same Reverse switching rectifier and method for making same

1975-11-17

1978-03-21

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 20, 357 55, 357 68, 357 86, 307252A, H01L 2974

Patent

active

040806200

ABSTRACT:
A reverse switching rectifier is described in which a PNPN semiconductor structure has a specially adapted N-type end zone or cathode-emitter zone. The N-type end zone penetrates to two different levels in the semiconductor body. A deep central portion and a shallow peripheral portion of the N-type end zone are produced by etching a cavity in the center of the body followed by diffusion of N-type dopant material. The exposed surfaces of the N-type end zone are then metallized to provide electrical and thermal contact thereto.

REFERENCES:
patent: 3634739 (1972-01-01), Borchert et al.
patent: 3858236 (1974-12-01), Schafer et al.
patent: 3864726 (1975-02-01), Schafer

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