Reverse side etching for producing layers with strain variation

Details Reverse side etching for producing layers with strain variation Reverse side etching for producing layers with strain variation

1994-12-30

1996-07-02

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257622, 257 18, H01L 2906, H01L 310328, H01L 310336, H01L 31072

Patent

active

055325106

ABSTRACT:
A new method to fabricate strain patterns on a strained semiconductor structure, is disclosed. The method is based on the new concept of reverse side etching of a laterally homogeneous, strained structure so that strain changes can be induced in the front-side, pre-strained area as a result of the reverse side etching process. Semiconductor structures such as quantum-wires, quantum dots, and quantum well devices may be formed by the disclosed methods where the reverse side etching provides strain control of the material properties of the semiconductor structure without processing the front side which is generally the active and the most sensitive region of the semiconductor structure. Such semiconductor structures can be formed by a process including the steps of forming a strained layer on the front-side of the structure, and etching the reverse side of the substrate to form a pattern of strain into the front-side, thus forming selectively strained regions.

REFERENCES:
patent: 4065970 (1978-01-01), Wilner
patent: 4797716 (1989-01-01), Chaffin
patent: 4929984 (1990-05-01), Muto
patent: 5294808 (1994-03-01), Lo
W. K. Chan et al., "Strain-Induced Lateral Carrier Confinement in Quantum Wells Grafted Onto Nonplanar Substrates", Applied Physical Letters, vol. 61, No. 11, Sep. 14, 1992, pp. 1319-1321.
D. Gershoni et al., "Effects of Two-Dimensional Confinement on the Optical Properties of InGaAs/InP Quantum Wire Structures", Applied Physical Letters, vol. 53, No. 11, Sep. 12, 1988, pp. 995-997.
D. Gershoni et al., "Optical Transitions in Quantum Wires with Strain-Induced Lateral Confinement", Physical Review Letters, vol. 65, No. 13, Sep. 24, 1990, pp. 1631-1634.
K. Kash et al., "Comment on `Optical Transitions in Quantum Wires with Strain-Induced Lateral Confinement` and Reply by D. Gershoni et al.", Physical Review Letters, vol. 66, No. 10, Mar. 11, 1991, pp. 1374-1375.
K. Kash et al., "Excitation Spectroscopy of Strain-Patterned Semiconductor Wires", Surface Science, vol. 229, Apr. 1990, pp. 245-247.
K. Kash et al., "Observation of Quantum Confinement by Strain Gradients", Physical Reveiw Letters, vol. 67, No. 10, Sep. 2, 1991, pp. 1326-1329.
K. Kash et al., "Observation of Quantum Dot Levels Produced by Strain Modulation of GaAs-AlGaAs Quantum Wells", Journal Of Vacuum Science Technology B, vol. 10, No. 4, Jul./Aug. 1992, pp. 2030-2033.
K. Kash et al., "Optical Properties of Quantum Wires Produced by Strain Patterning of GaAs-AlGaAs Quantum Wells", Surface Science, vol. 228, Apr. 1990, pp. 415-417.
K. Kash et al., "Strain-Induced Confinement of Carriers to Quantum Wires and Dots Within an InGaAs-InP Quantum Well", Applied Physical Letters, vol. 55, No. 7, Aug. 14, 1989, pp. 681-683.
K. Kash et al., "Strain-Induced Lateral Confinement of Carriers in Semiconductor Quantum Wells", Materials Research Society Symposium Proceedings, vol. 144, 1989, pp. 245-247.
K. Kash et al., "Strain-Induced Lateral Confinement of Excitons in GaAs-AlGaAs Quantum Well Microstructures", Applied Physical Letters, vol. 53, No. 9, Aug. 29, 1988, pp. 782-784.
C. H. Lin et al., "Photopumped Long Wavelength Vertical-Cavity Surface-Emitting Lasers Using Strain-Compensated Multiple Quantum Wells", Applied Physics Letters, vol. 64, No. 25, Jun. 20, 1994, pp. 3395-3397.
D. A. B. Miller et al., "Relation Between Electroabsorption in Bulk Semiconductors and in Quantum Wells: The Quantum-Confined Franz-Keldysh Effect", Physical Review Letters, vol. B33, 1986, pp. 6976-6982.
K. Nakajima, "Calculation of Compositional Dependence of Stresses in GaInAs/GaAs Strained Multilayer Heterostructures", Journal Of Crystal Growth, vol. 126, 1993, pp. 511-524.
VLSI Technology (S.M. Sze, Ed.), McGraw-Hill Inc., New York, 1988, pp. 14-25, 74-88, and 396-417.

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