Reverse reaction sintering of Si 3 N 4 /SiC composites

Details Reverse reaction sintering of Si 3 N 4 /SiC composites Reverse reaction sintering of Si 3 N 4 /SiC composites

2006-04-12

2008-11-04

Group, Karl E (Department: 1793)

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

C501S096500, C501S097400, C428S325000, C428S331000, C428S404000, C428S406000, C428S698000

Reexamination Certificate

active

07446066

ABSTRACT:
A method of making a composite sintered silicon nitride/silicon carbide body, including mixing a predetermined amount of silicon nitride powder with a predetermined amount of silicon carbide powder, heat-treating the resultant mixed powder at a temperature of between about 800 and 1500 degrees Celsius in a substantially nitrogen sintering atmosphere, and producing a thin film of silica around individual silicon nitride and silicon carbide grains. The thin film of silica is useful in retarding the diffusion of oxygen to the silicon nitride particles, slowing their oxidation. The pressure of the sintering atmosphere is not substantially greater than atmospheric pressure.

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