Reverse reaction sintering of Si 3 N 4 /SiC composites

Compositions: ceramic – Ceramic compositions – Carbide or oxycarbide containing

Reexamination Certificate

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Details

C501S096500, C501S097400, C428S325000, C428S331000, C428S404000, C428S406000, C428S698000

Reexamination Certificate

active

07446066

ABSTRACT:
A method of making a composite sintered silicon nitride/silicon carbide body, including mixing a predetermined amount of silicon nitride powder with a predetermined amount of silicon carbide powder, heat-treating the resultant mixed powder at a temperature of between about 800 and 1500 degrees Celsius in a substantially nitrogen sintering atmosphere, and producing a thin film of silica around individual silicon nitride and silicon carbide grains. The thin film of silica is useful in retarding the diffusion of oxygen to the silicon nitride particles, slowing their oxidation. The pressure of the sintering atmosphere is not substantially greater than atmospheric pressure.

REFERENCES:
patent: 3193399 (1965-07-01), Washburn
patent: 4747984 (1988-05-01), Soma et al.
patent: 4829027 (1989-05-01), Cutler et al.
patent: 4987104 (1991-01-01), Trigg
patent: 5082806 (1992-01-01), Dulin
patent: 5459112 (1995-10-01), Kim
patent: 5503122 (1996-04-01), Ritland et al.
patent: 5504046 (1996-04-01), Kim
patent: 5525374 (1996-06-01), Ritland et al.
patent: 5563108 (1996-10-01), Kim
patent: 5626914 (1997-05-01), Ritland et al.
patent: 5676907 (1997-10-01), Ritland et al.
patent: 5767025 (1998-06-01), Miyake et al.
patent: 5912200 (1999-06-01), Miyake et al.
patent: 5962103 (1999-10-01), Luthra et al.
patent: 5980699 (1999-11-01), Timmons et al.
patent: 6110853 (2000-08-01), Berger et al.
patent: 6133180 (2000-10-01), Miyake et al.
patent: 6261511 (2001-07-01), Miyake et al.
patent: 6350713 (2002-02-01), Petrak
patent: 6410468 (2002-06-01), Nakahata et al.
patent: 6649270 (2003-11-01), Kinoshita et al.
patent: 6916560 (2005-07-01), Wotting et al.
patent: 2006/0281625 (2006-12-01), Kinoshita et al.
patent: 1767885 (2007-03-01), None
patent: 4-114969 (1992-04-01), None

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