Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-12-01
2000-08-15
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345LP, 216 88, 438745, H01L 2100
Patent
active
061036285
ABSTRACT:
The present invention is directed to a method and apparatus for polishing a surface of a semiconductor wafer using a pad moveable in both forward and reverse directions. In both VLSI and ULSI applications, polishing the wafer surface to complete flatness is highly desirable. The forward and reverse movement of the polishing pad provides superior planarity and uniformity to the surface of the wafer. The wafer surface is pressed against the polishing pad as the pad moves in both forward and reverse directions while polishing the wafer surface. During polishing, the wafer is supported by a wafer housing having a novel wafer loading and unloading method.
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J.M. Steigerwald, R. Zirpoli, S.P. Murarka, D. Price and R.J. Gutman, "Pattern Geometry Effects in the Chemical-Mechanical Polishing of Inlaid Copper Structures", Oct. 1994, pp. 2842-2848.
Nutool, Inc.
Powell William
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