Reverse conducting gate-turnoff thyristor

Details Reverse conducting gate-turnoff thyristor Reverse conducting gate-turnoff thyristor

1994-09-14

1998-11-10

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257126, 257128, 257138, 257146, 257154, H01L 2974, H01L 31111

Patent

active

058359850

ABSTRACT:
A reverse conducting gate-turnoff thyristor includes a switching device section, a diode section, and an isolating section located between the switching device section and the diode section. The isolating section includes an impurity layer formed by controlling impurity diffusion and having an impurity concentration lower than those of the switching device section and the diode section.

REFERENCES:
patent: 4791470 (1988-12-01), Shinohe et al.
patent: 4857983 (1989-08-01), Baliga et al.
patent: 5047824 (1991-09-01), Tokunoh et al.
IEEE Transactions on Industry Applications, vol. 26, No. 5, pp. 835-838, Sept./Oct. 1990, Osamu Hashimoto, et al., "2.5-KV 2000-A Monolithic Reverse Conducting Gate Turn-Off Thyristor".
Patent Abstracts of Japan, vol. 11, No. 77, Mar. 7, 1987, JP-A-61232671, Oct. 16, 1986.
Patent Abstracts of Japan, vol. 12, No. 447, Nov. 24, 1988, JP-A-63174369, Jul. 18, 1988.

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