Reverse conducting gate turn-off thyristor device

Details Reverse conducting gate turn-off thyristor device Reverse conducting gate turn-off thyristor device

1987-06-22

1988-12-13

Clawson, Jr., Joseph E.

357 234, 357 55, 357 39, 357 68, 357 86, H01L 2974

Patent

active

047914700

ABSTRACT:
A reverse conducting gate turn-off thyristor device in which a gate turn-off thyristor and a reverse conduction diode are integrally formed in the same semiconductor wafer is constituted in such a manner that a part of a gate electrode is arranged in an isolation region that is sandwiched by the gate turn-off thyristor section and the reverse conduction diode section.

REFERENCES:
patent: 3879744 (1975-04-01), Dumas
patent: 3914782 (1975-10-01), Nakata
patent: 4040170 (1977-08-01), Schlegel et al.
patent: 4054893 (1977-10-01), Hutson
patent: 4083063 (1978-04-01), Yu
patent: 4243999 (1981-01-01), Azuma et al.
patent: 4471372 (1984-09-01), Tihanyi
patent: 4509089 (1985-04-01), Svedberg
patent: 4546401 (1985-10-01), Svedberg
IEEE Trans. on Electron Devices, ED--31, p. 1570; M. S. Adler et al; 1984.

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