Reverse conducting gate turn-off thyristor

Details Reverse conducting gate turn-off thyristor Reverse conducting gate turn-off thyristor

1994-03-24

1995-06-27

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257121, 257127, 257138, 257153, H01L 2974, H01L 2702

Patent

active

054282306

ABSTRACT:
A reverse conducting gate turn-off thyristor (RC-GTO) includes, in the same semiconductor body, a gate turn-off thyristor, a reverse current diode, and a semiconductor isolation region between the gate turn-off thyristor and the reverse current diode and having a first conductivity type semiconductor layer adjacent an anode electrode and spaced apart second conductivity type high-dopant-impurity-concentration regions opposite the anode electrode.

REFERENCES:
patent: 4150391 (1979-04-01), Jaecklin
patent: 4791470 (1988-12-01), Shinohe et al.
patent: 5281847 (1994-01-01), Tokunoh

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