Reverse conducting amplified gate thyristor with plate-like sepa

Details Reverse conducting amplified gate thyristor with plate-like sepa Reverse conducting amplified gate thyristor with plate-like sepa

1979-08-28

1981-10-20

Clawson, Jr., Joseph E.

357 20, 357 38, 357 86, H01L 29747

Patent

active

042964270

ABSTRACT:
A reverse conducting thyristor comprises a thyristor section, a diode section and a separator section. The three sections are integrally formed into a cylindrical body. The thyristor section is constituted by a first region of a first conductivity type, a second region of the second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, a cathode electrode, an auxiliary emitter region, an auxiliary gate electrode and a main gate electrode.
The first region is formed on a first electrode, the second region on the first region, and the third region on the second region. The main emitter region is so formed in the third region as to have its surface on the same level with that of the third region. The auxiliary emitter region is similarly formed in the third region and faces at least a part of that periphery of the main emitter region which does not contact the separator section. The cathode electrode is formed on the main emitter region. The auxiliary gate electrode is formed partly on the third region and partly on the auxiliary emitter region and is arched concentrically with the cylindrical body so as to surround at least a part of said periphery of the main emitter region. The main gate electrode is formed on that surface portion of the third region which is adjacent to that lateral surface of the auxiliary emitter region which does not face the main emitter region.
The diode section comprises a fourth region of the second conductivity type, a fifth region of the first conductivity type and a second electrode. The fourth region is formed on the first electrode, the fifth region on the fourth region, and the second electrode on the fifth region.
The separator section is a plate which is constituted by a sixth region of the first conductivity type, a seventh region of the second conductivity type and an eight region of the first conductivity type. The sixth region is formed on the first electrode, the seventh region on the sixth region, and the eighth region on the seventh region.

REFERENCES:
patent: 3280386 (1966-10-01), Philips
patent: 3337783 (1967-08-01), Stehney
patent: 3360696 (1967-12-01), Neilson et al.
patent: 3408545 (1968-10-01), De Cello et al.
patent: 3443171 (1969-05-01), Knott et al.
patent: 3549961 (1970-12-01), Gault
patent: 3590346 (1971-06-01), Bilo et al.
patent: 3731162 (1973-05-01), Suenaga et al.
patent: 3794890 (1974-02-01), Weimann et al.
patent: 3827073 (1974-07-01), Mize
patent: 3893153 (1975-07-01), Page et al.
patent: 3947864 (1976-03-01), Yatsuo et al.
patent: 3978514 (1976-08-01), Ogawa et al.
patent: 4028721 (1977-06-01), Yatsuo et al.
patent: 4031607 (1977-06-01), Cline et al.
J. Garrett, "The Evolution of a High-Power Fast-Switching Thyristor," Elect, Ewgr. vol. 48 #5, May 1971, pp. 33-35.
E. Wolley et al., "Char. of a 200 AMP G to Thyristor," IEEE Conf. Rec. of IAS/1973 Ann. Meet. IEEE Ind. App. Soc., 73 cho 763-31A, pp. 251-255.

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