Reverse channel GaAsFET oscillator

Oscillators – Solid state active element oscillator – Transistors

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331117R, 357 15, 357 22, 357 81, H03B 500

Patent

active

041351681

ABSTRACT:
A common-drain high frequency power oscillator is configured by electrically reversing the channel of a GaAsFET transistor. Such an oscillator can be flip-chip mounted for reduced thermal resistance and has superior oscillation characteristics as compared with conventional common-source oscillators. Specifically, its gain is nearly constant with frequency, oscillation is less critically dependent on terminal impedance, and it can be operated with a single polarity voltage supply.

REFERENCES:
patent: 3516021 (1970-06-01), Kohn
patent: 3538456 (1970-11-01), Contus
patent: 3995234 (1976-11-01), Tuccinardi
patent: 4015216 (1977-03-01), Masuda
Okazaki et al., "Microwave Oscillation with GaAsFET", Journal of the Japan Society of Applied Physics, vol. 44, 1975, pp. 157-162.
Pucel et al., "Experiments on Integrated Gallium-Arsenide F.E.T. Oscillators at X band", Electronics Letters, vol. 11, 15 May 1975, pp. 219-220.

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