Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Rendering selected devices operable or inoperable
Reexamination Certificate
2007-08-22
2009-12-29
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Rendering selected devices operable or inoperable
C438S212000, C257S327000, C257S329000, C257S492000, C257SE29013, C257SE29016, C257SE29198
Reexamination Certificate
active
07638368
ABSTRACT:
A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, which essentially accompanies a conventional reverse blocking IGBT, and that retains satisfactorily low on-state voltage is disclosed. The device includes a MOS gate structure formed on a n− drift layer, the MOS gate structure including a p+ base layer formed in a front surface region of the drift layer, an n+ emitter region formed in a surface region of the base layer, a gate insulation film covering a surface area of the base layer between the emitter region and the drift layer, and a gate electrode formed on the gate insulation film. An emitter electrode is in contact with both the emitter region and the base layer of the MOS gate structure. A p+ isolation region surrounds the MOS gate structure through the drift layer and extends across whole thickness of the drift layer. A p+ collector layer is formed on a rear surface of the drift layer and connects to a rear side of the isolation region. A distance W is greater than a thickness d, in which the distance W is a distance from an outermost position of a portion of the emitter electrode, the portion being in contact with the base layer, to an innermost position of the isolation region, and the thickness d is a dimension in a depth direction of the drift layer.
REFERENCES:
patent: 4210464 (1980-07-01), Tanaka et al.
patent: 4743952 (1988-05-01), Baliga
patent: 5017508 (1991-05-01), Dodt et al.
patent: 5463231 (1995-10-01), Ogura et al.
patent: 5510634 (1996-04-01), Okabe et al.
patent: 5608237 (1997-03-01), Aizawa et al.
patent: 5691553 (1997-11-01), Mori et al.
patent: 5698454 (1997-12-01), Zommer
patent: 5898199 (1999-04-01), Mori et al.
patent: 5973338 (1999-10-01), Okabe et al.
patent: 6008092 (1999-12-01), Gould
patent: 6091086 (2000-07-01), Zommer
patent: 6168981 (2001-01-01), Battaglia et al.
patent: 6198126 (2001-03-01), Mori et al.
patent: 6355493 (2002-03-01), Usenko
patent: 6831329 (2004-12-01), Yedinak et al.
patent: 6838321 (2005-01-01), Kaneda et al.
patent: 2003/0057478 (2003-03-01), Yun et al.
patent: 2005/0082640 (2005-04-01), Takei et al.
patent: 2006/0113613 (2006-06-01), Ninomiya et al.
patent: 2006/0267091 (2006-11-01), Takahashi
patent: 196 30 761 (1997-02-01), None
patent: 3-48462 (1991-03-01), None
patent: 3-48462 (1991-03-01), None
patent: 5-343667 (1993-12-01), None
patent: 6-97469 (1994-04-01), None
patent: 7-307469 (1995-11-01), None
patent: 2000-208768 (2000-07-01), None
patent: 2001-185727 (2001-07-01), None
patent: 2002-076017 (2002-03-01), None
patent: 2002-76017 (2002-03-01), None
patent: 2002-319676 (2002-10-01), None
patent: 2002-353454 (2002-12-01), None
Takei, M. et al.; “600V-IGBT with Reverse Blocking Capability”; Proceedings of 2001 International Symposium on Power Semiconductor Devices and ICs, Osaka, Japan; pp. 413-416.
Office Action issued in corresponding German Patent Application No. 10 2004 017 723.6-33, dated Feb. 5, 2008, with English translation.
Naito Tatsuya
Nemoto Michio
Takei Manabu
Fuji Electric Holdings Co., Ltd.
Rossi Kimms & McDowell LLP
Sefer A.
LandOfFree
Reverse blocking semiconductor device and a method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reverse blocking semiconductor device and a method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reverse blocking semiconductor device and a method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4090556