Reverse blocking IGBT

Details Reverse blocking IGBT Reverse blocking IGBT

1997-06-06

2000-07-18

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257127, 257138, 257147, H01L 2974, H01L 31111

Patent

active

060910860

ABSTRACT:
A method of forming a power integrated circuit device (100) including a semiconductor layer of first conductivity type. The semiconductor layer includes a front-side surface (103), a backside surface (116), and a scribe region (117). The semiconductor layer further including a plurality of active cells on the front-side surface (103). The present method includes forming a backside layer (116) of second conductivity type overlying the backside surface, and forming a continuous diffusion region (117) of the second conductivity type through the semiconductor layer to connect the scribe region to the backside layer (116).

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