Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – Plural diodes in same non-isolated structure – or device...
Reexamination Certificate
2006-08-10
2009-06-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
Plural diodes in same non-isolated structure, or device...
C257S312000, C257S355000, C257SE29344
Reexamination Certificate
active
07550820
ABSTRACT:
This invention discloses a decoupling capacitor in an integrated circuit, comprising a plurality of dedicated PN diodes with a total junction area greater than one tenth of a total active area of functional devices for which the dedicated PN diodes are intended to protect, a N-type region of the dedicated PN diodes coupling to a positive supply voltage (Vdd), and a P-type region of the dedicated PN diodes coupling to a complimentary lower supply voltage (Vss), wherein the dedicated PN diodes are reversely biased.
REFERENCES:
patent: 4626882 (1986-12-01), Cottrell et al.
patent: 5122855 (1992-06-01), Shirai
patent: 2005/0212049 (2005-09-01), Onodera
patent: 2007/0157144 (2007-07-01), Mai et al.
Chen Hsien-Te
Tai Chun-Hui
Yang Jen-Hang
Ahmed Selim
K & L Gates LLP
Pert Evan
Taiwan Semiconductor Manufacturing Co. Ltd.
LandOfFree
Reverse-biased PN diode decoupling capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Reverse-biased PN diode decoupling capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reverse-biased PN diode decoupling capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4116332