Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – As active junction in bipolar transistor
Patent
1994-08-15
1996-07-16
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
As active junction in bipolar transistor
257475, 257477, 257479, 257655, H01L 2948
Patent
active
055369669
ABSTRACT:
An improved Schottky transistor structure (6), including a bipolar transistor structure (7) and a Schottky diode structure (8), is formed by retrograde diffusing relatively fast diffusing atoms to form a localized retrograde diode well (9) as the substrate for the Schottky diode structure. An expanded buried collector layer (11) formed of relatively slow diffusing atoms underlies the base and collector regions of the bipolar transistor structure (7) and the retrograde diode well (9). A diode junction (10) is formed by expanding the base contact of the bipolar transistor structure to include the surface of the retrograde diode well. Preferably, the diode junction is a Platinum-Silicide junction. The improved Schottky transistor structure may be formed as part of a bipolar junction transistor fabrication process or a BICMOS integrated circuit fabrication process wherein the buried diode layer may be formed at the same time as the buried collector layer of the bipolar transistor structure and the retrograde diode well may be formed at the same time as the sub-emitter collector region of the bipolar transistor structure. The buried collector layer definition mask is also a buried diode layer definition mask, the sub-emitter collector region definition mask is also a retrograde diode well definition mask, and the bipolar contacts definition mask is also a diode junction contact definition mask.
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Joyce Christopher C.
Luk Timwah
Robinson Murray J.
Bohan Thomas L.
Caserio Chris A.
National Semiconductor Corporation
Wojciechowicz Edward
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