Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1980-07-21
1982-03-09
Massie, Jerome W.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29579, 29580, 156653, 156657, 1566611, 156662, H01L 2122, H01L 21308
Patent
active
043187595
ABSTRACT:
A method of electrically isolating a plurality of semiconductor integrated circuit components and for forming gate elements for silicon gate transistors is disclosed whereby extremely narrow line widths can be formed which heretofore have been unattainable by practicing conventional photolithography.
REFERENCES:
patent: 3595713 (1971-07-01), Brebisson et al.
patent: 3861024 (1975-01-01), Napoli et al.
patent: 4040168 (1977-08-01), Huang
patent: 4042726 (1977-08-01), Kaji et al.
patent: 4063992 (1977-12-01), Hosack
patent: 4124933 (1978-11-01), Nicholas
patent: 4239559 (1980-12-01), Ito
Benjamin, "Self-Aligned . . . Formation", IBM Technical Disclosure Bulletin, vol. 22, No. 7, (12/79) pp. 2749-2750.
Frederick Allen H.
Trenary Dale T.
Whelton Robert M.
Data General Corporation
Massie Jerome W.
LandOfFree
Retro-etch process for integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Retro-etch process for integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Retro-etch process for integrated circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1839310