Reticulated gate CCD pixel with diagonal strapping

Details Reticulated gate CCD pixel with diagonal strapping Reticulated gate CCD pixel with diagonal strapping

2006-09-12

2006-09-12

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S233000, C257S240000, C257SE27083, C257SE27150

Reexamination Certificate

active

07105876

ABSTRACT:
A sensor includes an array of pixels organized in rows and columns and a plurality of metal busses overlaying the array of pixels. A first column of pixels includes a proximal set of first pixels and a distal set of first pixels separated by a first jog region. A second column of pixels includes a proximal set of second pixels and a distal set of second pixels separated by a second jog region. The first jog region is displaced in a column direction and in a lateral direction transverse to the column direction from the second jog region. A first metal bus is insulatively disposed over both the first and second jog regions.

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