Reticle, semiconductor exposure apparatus and method, and...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07348107

ABSTRACT:
The invention disclosed herein concerns technology that ensures, in a projection exposure process using a transmission type reticle, exposure with an even finish size throughout the entire exposure region, without adverse influence of external disturbance light such as back-surface reflection, for example. Specifically, the invention provides a reticle, a semiconductor exposure apparatus and method, and a semiconductor device manufacturing method, wherein a reticle used there includes a pattern region in which a circuit pattern is formed, a light blocking region of a width d formed at an outside periphery of the pattern region, and an anti-reflection film formed on a surface of the reticle remote from the pattern region, wherein the width d of the light blocking film satisfies a relationd≤2⁢t·tan⁢{sin-1⁡(n1n2⁢⁢sin⁢⁢θ)}where n1is a refractive index of a medium at a light entrance side of the reticle, n2is a refractive index of the reticle, t is a thickness of the reticle, and θ is an incidence angle of light upon the reticle.

REFERENCES:
patent: 5422206 (1995-06-01), Kamon
patent: 6627355 (2003-09-01), Levinson et al.
patent: 2001/0028983 (2001-10-01), Kawamura et al.
patent: 2002/0132171 (2002-09-01), Levinson et al.
patent: 8-123007 (1996-05-01), None
patent: 9-211842 (1997-08-01), None
patent: 09211842 (1997-08-01), None
European Search Report dated Feb. 3, 2006.

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