Reticle for photolithographic patterning

Details Reticle for photolithographic patterning Reticle for photolithographic patterning

1991-01-31

1992-06-30

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430290, 430296, 430321, 2504922, 2504923, 250398, G03F 900

Patent

active

051262207

ABSTRACT:
A reticle comprises a substrate transparent to an optical beam, an opaque layer provided on the substrate for interrupting the optical beam according to the desired pattern, the opaque layer being patterned to form an opaque pattern that interrupts the optical beam and a transparent pattern that transmits the optical beam selectively according to the desired pattern; and a phase shift pattern transparent to the optical beam for transmitting the optical beam therethrough, wherein the phase shift pattern comprises an electrically conductive material and provided on the substrate in correspondence to the transparent pattern in the opaque layer, for canceling the diffraction of the optical beam passed through the transparent pattern.

REFERENCES:
patent: 5023156 (1991-06-01), Takeuchi et al.
patent: 5045417 (1991-09-01), Okamoto
Levenson, M. D. et al, "Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982.

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