Reticle for a reduced projection exposure apparatus

Optics: measuring and testing – By alignment in lateral direction – With registration indicia

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G01B 1100

Patent

active

052373932

ABSTRACT:
In a reticle, a small pattern including a transparent portion and a large pattern including a light shielding portion are provided on a straight line in parallel to an x or y direction of the pattern forming area in the vicinities of crossing portions of opposite two sides of the pattern forming area with the straight line. A wafer is exposed with this reticle such that centers of the small pattern and the large pattern are overlapped. By measuring relative deviation of the center positions, the in-field error is calculated.

REFERENCES:
patent: 4550374 (1985-10-01), Meshman et al.
patent: 4771180 (1988-09-01), Nomura et al.
patent: 4842412 (1989-06-01), Miyake
patent: 4938600 (1990-07-01), Into

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