Reticle barrier system for extreme ultra-violet lithography

Details Reticle barrier system for extreme ultra-violet lithography Reticle barrier system for extreme ultra-violet lithography

2006-01-10

2006-01-10

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C428S014000

Reexamination Certificate

active

06984474

ABSTRACT:
The present invention is directed to a reticle barrier system that prevents contaminants from landing on a mask within lithographic systems using extreme ultra violet light. In particular, a reticle barrier system is provided that consists of a mask barrier and a set of contact barriers. The mask barrier surrounds a mask formed on a reticle, while the contact barriers are affixed between the mask and contact spots on a reticle. The barriers have a height relative to the mask, and different geometries are provided. Collectively, the mask and contact barriers reduce the number of contaminants landing on a mask surface without the use of a pellicle. In an alternate embodiment, the reticle barrier system includes only a mask barrier. Similarly, in another alternate embodiment, the reticle barrier system includes only contact barriers.

REFERENCES:
patent: 6239863 (2001-05-01), Catey et al.

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