Reticle and pattern formation method

Details Reticle and pattern formation method Reticle and pattern formation method

1998-01-27

1999-12-07

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430394, G03F 900

Patent

active

059980680

ABSTRACT:
A reticle has a phase-shifting pattern region, a normal pattern (chrome pattern) region, and a shielding region. The phase-shifting pattern region has first and second apertures and mask portions located therebetween. The first apertures transmit light opposite in phase to light transmitted by the second apertures. The normal pattern region has apertures and mask portions. The semiconductor chip regions of a resist film formed on a wafer are exposed stepwise through the phase-shifting pattern region. Subsequently, the portions of the semiconductor chip regions exposed through the phase-shifting pattern region are exposed through the normal pattern region.

REFERENCES:
patent: 5578421 (1996-11-01), Hasegawa et al.
patent: 5766829 (1998-06-01), Cathey, Jr. et al.

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