Reticle and method of design to correct pattern for depth of foc

Details Reticle and method of design to correct pattern for depth of foc Reticle and method of design to correct pattern for depth of foc

1998-03-04

1999-10-26

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 30, G03F 900

Patent

active

059725419

ABSTRACT:
A method and apparatus for converting a layout design for the metallization layer integrated circuit pattern to a reticle design having corrections for depth of focus problems. The apparatus includes a design rule checker which is configured to identify locations of the layout design which are expected to produce narrowed regions of the image caused by depth of focus variations at intersections between defined line features of the layout design and the elevated portions of the topographical variations. A depth of focus correction unit is included which is adapted to modify the layout design for the metallization integrated circuit pattern at the locations by increasing the line width of the defined line features from the integrated circuit pattern to correct for these depth of focus problems.

REFERENCES:
patent: 5705301 (1998-01-01), Garza et al.
patent: 5723233 (1998-03-01), Garza et al.

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