Retention improvement technique for one time programmable...

Details Retention improvement technique for one time programmable... Retention improvement technique for one time programmable...

2006-01-03

2006-01-03

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220

Reexamination Certificate

active

06982907

ABSTRACT:
A programming technique for a one-time-programmable non-volatile memory (NVM) utilizes a repeated programming cycle with an interval between cycles that is long enough to redistribute charge in the layers surrounding the floating gate of the cell. Each cycle programs the floating gate and also the surrounding layers. The cycling saturates in an equilibrium state when the electric field form outside to the floating gate equals zero. This technique eliminates the first stage of conventional VT drop in NVM cells and, thus, improves retention.

REFERENCES:
patent: 4486769 (1984-12-01), Simko
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5677867 (1997-10-01), Hazani
patent: 6137723 (2000-10-01), Bergemont et al.

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