Retaining wall technique to maintain physical shape of material

Coating processes – Electrical product produced – Welding electrode

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219121LE, 219121LF, B05D 306

Patent

active

043729908

ABSTRACT:
A method for preparing semiconductor material for integrated circuit device fabrication. A retaining wall is formed around islands of semiconductor material that are to include the active devices, and the islands are then subjected to transient radiation annealing. The retaining wall holds the shape of the islands during annealing, and promotes uniform crystal alignment in the material.

REFERENCES:
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4292091 (1981-09-01), Togei
patent: 4303455 (1981-12-01), Splinter et al.

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