RET for optical maskless lithography

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S394000, C430S396000, C430S311000, C347S239000, C359S224200, C250S492200, C250S492220

Reexamination Certificate

active

07618751

ABSTRACT:
The present invention relates to Optical Maskless Lithography (OML). In particular, it relates to providing OML with a recognizable relationship to mask and phase-shift mask techniques.

REFERENCES:
patent: 4498010 (1985-02-01), Biechler et al.
patent: 4879605 (1989-11-01), Warkentin et al.
patent: 4902133 (1990-02-01), Tojo et al.
patent: 4989255 (1991-01-01), Manns et al.
patent: 5103101 (1992-04-01), Berglund et al.
patent: 5148157 (1992-09-01), Florence
patent: 5278949 (1994-01-01), Thayer
patent: 5340700 (1994-08-01), Chen et al.
patent: 5393987 (1995-02-01), Abboud et al.
patent: 5467146 (1995-11-01), Huang et al.
patent: 5471305 (1995-11-01), Yoneda et al.
patent: 5504504 (1996-04-01), Markandey et al.
patent: 5563706 (1996-10-01), Shibuya et al.
patent: 5774254 (1998-06-01), Berlin
patent: 5835256 (1998-11-01), Huibers
patent: 5870176 (1999-02-01), Sweatt et al.
patent: 6103101 (2000-08-01), Fragelli et al.
patent: 6118535 (2000-09-01), Goldberg et al.
patent: 6142641 (2000-11-01), Cohen et al.
patent: 6177980 (2001-01-01), Johnson
patent: 6184994 (2001-02-01), Freischlad
patent: 6201545 (2001-03-01), Wong et al.
patent: 6261728 (2001-07-01), Lin et al.
patent: 6285488 (2001-09-01), Sandstrom et al.
patent: 6348907 (2002-02-01), Wood
patent: 6489984 (2002-12-01), Johnson
patent: 6504644 (2003-01-01), Sandstrom et al.
patent: 6605816 (2003-08-01), Sandstrom et al.
patent: 6618185 (2003-09-01), Sandstrom et al.
patent: 6717097 (2004-04-01), Sandstrom et al.
patent: 6717650 (2004-04-01), Jain
patent: 6813062 (2004-11-01), Sandstrom et al.
patent: 6833854 (2004-12-01), Sandstrom et al.
patent: 7186486 (2007-03-01), Walford et al.
patent: 2001/0040670 (2001-11-01), Fielding
patent: 2002/0197565 (2002-12-01), Wu
patent: 2003/0107770 (2003-06-01), Klatchko et al.
patent: 2004/0251430 (2004-12-01), Sandstrom
patent: 2005/0053850 (2005-03-01), Askebjer et al.
patent: 0568801 (1993-11-01), None
patent: 1369743 (2003-12-01), None
patent: WO-0049577 (2000-08-01), None
patent: WO-01/93303 (2001-12-01), None
Written Opinion of the International Preliminary Examining Authority for International Application No. PCT/SE2005/000269 mailed Mar. 10, 2006.
Written Opinion of the International Searching Authorty for International Application No. PCT/SE2005/000269 mailed on Jul. 14, 2005.
“Reply to written opinion of Jul. 14, 2005” for International Application No. PCT/SE2005/000269 dated Dec. 8, 2005.
International Preliminary Report on Patentability for International Application No. PCT/SE2005/000269 completed May 31, 2006.
Finders, J. et al. “Low-k1 imaging: how low can we go?” inMicrolithographic Techniques in Integrated Circuit Fabrication II, ed. C. A. Mack et al., Proceedings of SPIE vol. 4226 (2000).
International Search Report of International Application PCT/SE 2004/000936 mailed Sep. 21, 2004.
International Search Report of International Application No. PCT/SE 2005/000269 mailed on Jul. 14, 2005.
Kalus, C.K. et al. “Benchmarking of available rigorous electromagnetic field (EMF) simulators for phase-shift mask applications,” Microelectronic Engineering, Sep. 2001, vol. 57-58, pp. 79-86.
Mak, G.Y.H. et al. “Placement sensitivity to aberration in optical imaging,” 2003 IEEE Conference on Electron Devices and Solid-state Circuits, Dec. 16-18, 2003, pp. 475-478.
McCarthy, A.M. et al. “A Novel Technique for Detecting Llthographic Defects.” IEEE Transactions on Semiconductor Manufacturing, vol. 1, No. 1, Feb. 1998, p. 10-15.
Newman, T. et al. “Evaluation of OPC Mask Printing with a Raster Scan Pattern Generator.” Proceeding of SPIE, vol. 4691, Optical Microlithography XV, Jul. 2002, p. 1320-1330.
Rieger, M.L. et al. “Image Quality Enhancements for Raster Scan Lithography.” Proceedings of SPIE, vol. 922, Optical/Laser Microlithography, Mar. 1988, p. 55-64.
Rieger, M.L. et al. “Lithographic Alternatives to PSM Repair.” Proceedings of SPIE, vol. 1674, Optical/Laser Microlithography V, 1992, p. 609-617.
Stephanakis, A.C. et al. “Advances in 1 : 1 Optical Lithography,” Proceedings of SPIE, Optical Microlithography VI, vol. 772. p. 74-85 (1987).
Wolf, S. “Advanced Lithography,” p. 493-513 in Silicon Processing for the VLSI Era—vol. 1: Process Technology, Lattice Press, Inc.,1986.

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