Restoration of high infrared sensitivity in extrinsic silicon de

Details Restoration of high infrared sensitivity in extrinsic silicon de Restoration of high infrared sensitivity in extrinsic silicon de

1980-07-07

1983-11-22

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148186, H01L 21225

Patent

active

044160518

ABSTRACT:
A method and apparatus for removing heavy metal impurities such as gold, silver, nickel and copper from a crystalline substrate is described incorporating a damaged crystalline layer which may be formed by excessive doping to trap or getter heavy metal impurities to enhance the majority carrier lifetime of the detector material.
The invention overcomes the problem of degraded responsivity in radiant energy crystalline detectors after high temperature processing, in excess of 900.degree. C., which permits surface contaminants such as gold, silver, nickel and copper to diffuse through the detector material raising the net donor density.

REFERENCES:
patent: 3449177 (1969-06-01), Huth et al.
patent: 3791884 (1974-02-01), Dathe et al.
patent: 4053335 (1977-10-01), Hu
patent: 4115798 (1978-09-01), Platzoeder

Affiliated with

Also associated with

Rating

Restoration of high infrared sensitivity in extrinsic silicon de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Restoration of high infrared sensitivity in extrinsic silicon de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Restoration of high infrared sensitivity in extrinsic silicon de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1809193